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MSA-0670

Hewlett-Packard
Part Number MSA-0670
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Mar 3, 2006
Detailed Description Agilent MSA-0670 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • Low Operat...
Datasheet PDF File MSA-0670 PDF File

MSA-0670
MSA-0670

Overview
Agilent MSA-0670 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 3.
5 V Typical Vd Description The MSA-0670 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package.
This MMIC is designed for use as a general purpose 50 Ω gain block.
Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
70 mil Package • 3 dB Bandwidth: DC to 1.
0 GHz • High Gain: 19.
5 dB Typical at 0.
5 GHz • Low Noise Figure: 2.
8 dB Typical at 0.
5 GHz • Hermetic Gold-ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 3.
5 V 2 2 MSA-0670 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 200 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 130°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 7.
7 mW/°C for TC > 174°C.
4.
The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω Power Gain (|S 21| 2) f = 0.
1 GHz f = 0.
1 to 0.
6 GHz f = 0.
1 to 1.
5 GHz f = 0.
1 to 1.
5 GHz f = 0.
5 GHz f = 0.
5 GHz f = 0.
5 GHz f = 0.
5 GHz Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB...


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