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MSA-0611

Hewlett-Packard
Part Number MSA-0611
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Mar 3, 2006
Detailed Description Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0611 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidt...
Datasheet PDF File MSA-0611 PDF File

MSA-0611
MSA-0611

Overview
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0611 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.
7 GHz • High Gain: 18.
0 dB Typical at 0.
5 GHz • Low Noise Figure: 3.
0 dB Typical at 0.
5 GHz • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Description The MSA-0611 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in the surface mount plastic SOT-143 package.
This MMIC is designed for use as a general purpose 50 Ω gain block.
Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent SOT-143 Package Note: 1.
Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices”.
performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) C block IN MSA C block OUT Vd = 3.
3 V 2 MSA-0611 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 125 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 505°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 2.
0 mW/°C for TC > 87°C.
4.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω Power Gain (|S 21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature ...


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