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MSA-0600

Hewlett-Packard
Part Number MSA-0600
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Mar 3, 2006
Detailed Description Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0600 Features • Cascadable 50 Ω Gain Block • Low Operatin...
Datasheet PDF File MSA-0600 PDF File

MSA-0600
MSA-0600

Overview
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0600 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage (3.
5␣ V typical V d) • 3 dB Bandwidth: DC to 1.
0 GHz • High Gain: 19.
5 dB Typical at 0.
5␣ GHz • Low Noise Figure: 2.
8␣ dB Typical at 0.
5␣ GHz broad band IF and RF amplifiers in commercial, industrial and military applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.
7 mil gold wire.
[1] See APPLICATIONS section, “Chip Use”.
Chip Outline[1] Description The MSA-0600 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip.
This MMIC is designed for use as a general purpose 50 Ω gain block.
Typical applications include narrow and Note: 1.
This chip contains additional biasing options.
The performance specified applies only to the bias option whose bond pads are indicated on the chip outline.
Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.
Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 3.
5 V 2 5965-9583E 6-362 MSA-0600 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 200 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 50°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TMounting Surface (TMS) = 25°C.
3.
Derate at 20 mW/°C for TMounting␣ Surface > 190°C.
4.
The small spot size of this technique results in a higher, though more accurate determination of θjc tha...


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