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2SK3563

Part Number	2SK3563
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Mar 14, 2006
Detailed Description	DataSheet.in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 2SK3563 unit：ｍｍ S...
Datasheet	2SK3563 PDF File

Overview

DataSheet.
in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.
3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
5 150 -55~150 A W mJ A mJ °C °C Unit 0.
69±0.
15 2.
8Max V V V 2.
54±0.
25 0.
64±0.
15 2.
54±0.
25 2.
6 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1.
2.
3...

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