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2SK3569

Toshiba Semiconductor
Part Number 2SK3569
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jun 2, 2006
Detailed Description 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications •...
Datasheet PDF File 2SK3569 PDF File

2SK3569
2SK3569

Overview
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
54 Ω (typ.
) • High forward transfer admittance: |Yfs| = 8.
5 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V 600 V ±30 V 10 A 40 45 W 363 mJ 10 A 4.
5 mJ 150 °C -55 to 150 °C 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.
7 g (typ.
) Note: Using con...


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