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TIM1414-8L

Toshiba
Part Number TIM1414-8L
Manufacturer Toshiba
Description Microwave Power GaAs FET
Published Jul 30, 2006
Detailed Description www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Fea...
Datasheet PDF File TIM1414-8L PDF File

TIM1414-8L
TIM1414-8L

Overview
www.
DataSheet4U.
com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.
5 dBm at 14.
0 GHz to 14.
5 GHz • High gain - G1dB = 5.
0 dB at 14.
0 GHz to 14.
5 GHz • Broad band internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 ∆G ηadd IM3 IDS2 ∆Tch VDSxIDSxRth(c-c...


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