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AP2301GN

Advanced Power Electronics
Part Number AP2301GN
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 3, 2007
Detailed Description AP2301GN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Datasheet PDF File AP2301GN PDF File

AP2301GN
AP2301GN

Overview
AP2301GN Pb Free Plating Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 130mΩ - 2.
6A Description SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 www.
DataSheet4U.
com Parameter Rating - 20 ± 12 -2.
6 -2.
1 -10 1.
38 0.
01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
90 Unit ℃/W Data and specifications subject to change without notice 200407043 AP2301GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
-20 -0.
5 - Typ.
-0.
1 4.
4 5.
2 1.
36 0.
6 5.
2 9.
7 19 29 295 170 65 Max.
Units 130 190 -1 -10 ±100 10 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-5V, ID=-2.
8A VGS=-2.
8V, ID=-2.
0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.
8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=±12V ID=-2.
8A VDS=-6V VGS=-5V VDS=-15V ID=-1A RG=6Ω,VGS=-...


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