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FDS8870

Fairchild Semiconductor
Part Number FDS8870
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FDS8870 N-Channel PowerTrench® MOSFET April 2007 FDS8870 tm N-Channel PowerTrench® MOSFET 30V, 18A, 4.2mΩ Features...
Datasheet PDF File FDS8870 PDF File

FDS8870
FDS8870

Overview
FDS8870 N-Channel PowerTrench® MOSFET April 2007 FDS8870 tm N-Channel PowerTrench® MOSFET 30V, 18A, 4.
2mΩ Features „ rDS(on) = 4.
2mΩ, VGS = 10V, ID = 18A „ rDS(on) = 4.
9mΩ, VGS = 4.
5V, ID = 17A „ High performance trench technology for extremely low rDS(on) „ Low gate charge „ High power and current handling capability „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications „ DC/DC converters Branding Dash 5 1 2 3 4 SO-8 5 4 6 3 7 2 8 1 ©2007 Fairchild Semiconductor Corporation 1 FDS8870 Rev.
B www.
fairchildsemi.
com FDS8870 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 25oC, VGS = 4.
5V, RθJA = 50oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient (Note 2a) Thermal Resistance, Junction to Ambient (Note 2b) Package Marking and Ordering Information Device Marking FDS8870 Device FDS8870 Package SO-8 Reel Size 330mm Ratings 30 ±20 18 17 134 420 2.
5 20 -55 to 150 25 50 125 Units V V A A A mJ W mW/oC oC oC/W oC/W oC/W Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V 30 VDS = 24V VGS = 0V TJ = 150oC - VGS = ±20V - On Characteristics VGS...


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