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IRG4BC40F

International Rectifier
Part Number IRG4BC40F
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 30, 2007
Detailed Description PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1...
Datasheet PDF File IRG4BC40F PDF File

IRG4BC40F
IRG4BC40F

Overview
PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
50V @VGE = 15V, IC = 27A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = ...


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