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IRG4BC40W

International Rectifier
Part Number IRG4BC40W
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 30, 2007
Detailed Description PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and...
Datasheet PDF File IRG4BC40W PDF File

IRG4BC40W
IRG4BC40W

Overview
PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) typ.
= 2.
05V @VGE = 15V, IC = 20A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topolo...


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