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IRF7325

International Rectifier
Part Number IRF7325
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jun 4, 2007
Detailed Description PD- 94094 IRF7325 HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance q Dual P-Channel MOSFET q Low Profile ...
Datasheet PDF File IRF7325 PDF File

IRF7325
IRF7325


Overview
PD- 94094 IRF7325 HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance q Dual P-Channel MOSFET q Low Profile (<1.
8mm) q Available in Tape & Reel q q VDSS -12V RDS(on) max (mΩ) 24@VGS = -4.
5V 33@VGS = -2.
5V 49@VGS = -1.
8V ID ±7.
8A ±6.
2A ±3.
9A Description New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadfr...



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