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AO4850

Alpha & Omega Semiconductors
Part Number AO4850
Manufacturer Alpha & Omega Semiconductors
Description Dual N-Channel MOSFET
Published Jun 7, 2007
Detailed Description AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4850 uses advanced trench techn...
Datasheet PDF File AO4850 PDF File

AO4850
AO4850

Overview
AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs may be used in H-bridge, Inverters and other applications.
AO4850 is Pb-free (meets ROHS & Sony 259 specifications).
Features VDS (V) = 75V (VGS = 10V) ID = 3.
1A RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.
5V) D1 S2 G2 S1 G1 www.
DataSheet4U.
com D2 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Avalanche Current B B Symbol VDS VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG Maximum 10 Sec Steady State 75 ±25 3.
1 2.
4 15 2 1.
3 10 15 -55 to 150 1.
1 0.
7 2.
3 1.
8 Units V V A W A mJ °C Repetitive avalanche energy 0.
3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 50 82 41 Max 62.
5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO4850 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=2A Forward Transconductance VDS=5V, ID=3.
1A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=75V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.
1A TJ=125°C 1 15 105 158 126 10 0.
77 1 2.
5 290 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 24 2.
4 5.
14 VGS=10V, VDS=30V, ID=3.
1A 2.
34 0.
97 1.
18 4 VGS=10V, VDS=30V, RL=9.
7Ω, RGEN=3Ω IF=3.
...


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