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2SB1030A

Panasonic Semiconductor
Part Number 2SB1030A
Manufacturer Panasonic Semiconductor
Description Silicon PNP epitaxial planer type Transistor
Published Oct 5, 2007
Detailed Description Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423...
Datasheet PDF File 2SB1030A PDF File

2SB1030A
2SB1030A


Overview
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.
0±0.
2 3.
0±0.
2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –7 –1 – 0.
5 300 150 –55 ~ +150 Unit marking +0.
2 0.
45–0.
1 0.
7±0.
1 15.
6±0.
5 Optimum for high-density mounting.
Allowing supply with the radial taping.
V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.
27 1.
27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.
54±0.
15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB1030 2SB1030A 2SB1030 2SB1030A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –7 85 40 – 0.
35 200 6 *2 min typ max – 0.
1 –1 2.
0±0.
2 Unit µA µA V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance – 0.
6 V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 500 –1200 Ta=25˚C 450 –1000 2SB1030, 2SB1030A IC — VCE –100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power dissipation PC (mW) –30 –10 –3 –1 Ta=–25˚C 25˚C 75˚C 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 –800 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA –600 –40...


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