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AP9915H

Advanced Power Electronics
Part Number AP9915H
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 2, 2008
Detailed Description AP9915H/J Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current www.Dat...
Datasheet PDF File AP9915H PDF File

AP9915H
AP9915H

Overview
AP9915H/J Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ Low drive current www.
DataSheet4U.
com ▼ Single N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 50mΩ 20A G S Drive Requirement Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating 20 ± 12 20 16 41 26 0.
2 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-...


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