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K2967

Toshiba Semiconductor
Part Number K2967
Manufacturer Toshiba Semiconductor
Description 2SK2967
Published Aug 16, 2008
Detailed Description 2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2967 DC−DC Converter, Relay Drive and Mo...
Datasheet PDF File K2967 PDF File

K2967
K2967

Overview
2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2967 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 48 mΩ (typ.
) : |Yfs| = 30 S (typ.
) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode : Vth = 1.
5~3.
5 V (VDS = 10 V, ID = 1 mA) www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 30 120 150 925 30 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1.
...


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