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2SC6075

Part Number	2SC6075
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Sep 10, 2008
Detailed Description	2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications...
Datasheet	2SC6075 PDF File

Overview

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.
5 V (max)（IC = 1A） High-speed switching: tstg = 0.
4 μs (typ) www.
DataSheet4U.
com Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 9 2.
5 5.
0 1.
0 1.
3 150 −55～150 Unit V V V V A A A W °C °C 1 : EMITTER 2 : COLLECTOR 3 : BASE JEDEC JEITA TOSHIBA Weight:0.
55g(t...

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