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SPD08N10

Infineon Technologies
Part Number SPD08N10
Manufacturer Infineon Technologies
Description SIPMOS Power Transistor
Published Nov 21, 2008
Detailed Description Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 08N10 Product Summary Drain source voltage Drain...
Datasheet PDF File SPD08N10 PDF File

SPD08N10
SPD08N10

Overview
Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.
3 8.
4 V Ω A Enhancement mode rated • Avalanche rated www.
DataSheet4U.
com • dv/dt Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 8.
4 5.
4 33.
6 30 4 6 ±20 40 -55.
.
.
+175 55/150/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 8.
4 A, VDD = 25 V, R GS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs V W ˚C IS = 8.
4 A, V DS = 80 V, di/dt = 200 A/µs Gate source voltage Power dissipation VGS Ptot Tj , Tstg TC = 25 ˚C Operating and storage temperature IEC climatic category;...


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