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2SK3567

Toshiba Semiconductor
Part Number 2SK3567
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Nov 29, 2008
Detailed Description 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Applications •...
Datasheet PDF File 2SK3567 PDF File

2SK3567
2SK3567

Overview
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.
7Ω (typ.
) High forward transfer admittance: |Yfs| = 2.
5S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 3.
5 14 35 201 3.
5 3.
5 150 -55~150 A W mJ A mJ °C °C Unit V V V 1: Gate 2: Drain 3: Source Pulse (t =...


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