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AP3310GH

Advanced Power Electronics
Part Number AP3310GH
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Jan 12, 2009
Detailed Description AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capabil...
Datasheet PDF File AP3310GH PDF File

AP3310GH
AP3310GH

Overview
AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ 2.
5V Gate Drive Capability www.
DataSheet4U.
com P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -20V 150mΩ -10A ▼ Fast Switching Characteristic G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
This device is suited for low voltage and lower power applications.
G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - 20 ± 12 -10 -6.
2 -24 15.
6 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 8.
0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201029074-1/4 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.
5V, ID=-2.
8A VGS=-2.
5V, ID=-2.
0A Min.
Typ.
Max.
Units -20 -0.
5 2.
8 4.
2 1.
2 0.
4 7 8 13 5 320 75 55 V 150 mΩ 250 mΩ -1 -25 V S uA uA nC nC nC ns ns ns ns pF pF pF GS(th) www.
DataSheet4U.
com V Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.
8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=±12V ID=-2.
8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6Ω,VGS=-5V RD=6Ω VGS=0V VDS=-6V f=1.
0MHz gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Leakage Total Gate Charge 2 ±100 nA Gate-Source Charge Gate-Drain ("M...


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