DatasheetsPDF.com

BDV67D

SavantIC
Part Number BDV67D
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 10, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datash...
Datasheet PDF File BDV67D PDF File

BDV67D
BDV67D

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.
datasheet4u.
com ·Complement to type BDV66/66A/66B/66C/66D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in audio output stages and general amplifier and switching applications.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV67/67A/67B/67C/67D Fig.
1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDV67 BDV67A VCBO Collector-base voltage BDV67B BDV67C BDV67D BDV67 BDV67A VCEO Collector-emitter voltage BDV67B BDV67C BDV67D VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 140 160 60 80 100 120 150 5 16 20 0.
5 200 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDV67 BDV67A V(BR)CEO Collector-emitter breakdown voltage BDV67B BDV67C BDV67D VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 CC VF ton toff Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector capacitance Diode forward voltage Turn-on time Turn-off time IC=10A ,IB=40mA IC=10A ; VCE=3V IC=30mA, IB=0 www.
datasheet4u.
com BDV67/67A/67B/67C/67D SYMBOL CONDITIONS MIN 60 80 100 120 150 TYP.
MAX UNIT V 2.
0 2.
5 1.
0 4.
0 1 5 3000 1000 1000 300 3.
0 1.
0 3.
5 V V mA mA mA VCB=VCBOmax, IE=0 VCB=1/2VCBOmax; Tj=150 VCE=1/2VCEOmax, IB=0 VEB=5V; IC=0 IC=1A ; VCE=3V IC=10A ; VCE=3V IC=16A ; VCE=3V IE=0 ; VCB=10V;f=1MHz IE=10A IC = 10 A, IB1 =-IB2=40 mA VCC = 12V pF V µs µs THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base MAX 0.
625 U...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)