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KRF7501

Guangdong Kexin Industrial
Part Number KRF7501
Manufacturer Guangdong Kexin Industrial
Description HEXFET Power MOSFET
Published Aug 20, 2009
Detailed Description SMD Type HEXFET Power MOSFET KRF7501 IC IC Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MO...
Datasheet PDF File KRF7501 PDF File

KRF7501
KRF7501

Overview
SMD Type HEXFET Power MOSFET KRF7501 IC IC Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Gate-to-Source Voltage Single Pulse tp 10 s Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 1.
7A, di/dt 66A/ s, VDD V(BR)DSS,TJ 10sec.
150 VGSM VGS dv/dt TJ, TSTG R JA *1 *1 Symbol VDS ID ID IDM PD PD Rating 20 2.
4 1.
9 19 1.
25 0.
8 0.
01 16 12 5 -55 to + 150 100 /W W W W/ V V V/ns A Unit A *2 Surface mounted on FR-4 board, t www.
kexin.
com.
cn 1 SMD Type KRF7501 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%.
Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = 1.
7A, VGS = 0V*1 TJ = 25 , IF = 1.
7A.
VR=10V di/dt = 100A/ s*1 39 37 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = 1mA,Reference to 25 VGS = 4.
5V, ID = 1.
7A*1 VGS = 2.
7V, ID =0.
85A*1 Min 20 Typ Max Unit V 0.
041 0.
085 0.
135 0.
120 0.
70 2.
6 1.
0 25 -100 100 5.
3 0.
84 2.
2 5.
7 24 15 16 260 130 61 1.
25 8.
0 1.
3 3.
3 0.
20 V/ RDS(on) VGS(th...


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