DatasheetsPDF.com

KRF7504

Guangdong Kexin Industrial
Part Number KRF7504
Manufacturer Guangdong Kexin Industrial
Description HEXFET Power MOSFET
Published Aug 20, 2009
Detailed Description SMD Type HEXFET Power MOSFET KRF7504 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very...
Datasheet PDF File KRF7504 PDF File

KRF7504
KRF7504

Overview
SMD Type HEXFET Power MOSFET KRF7504 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (<1.
1mm) Available in Tape & Reel Fast Switching IC IC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -4.
5V @ TA = 25 Continuous Drain Current, VGS @ -4.
5V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS dv/dt TJ, TSTG R JA Symbol ID ID IDM @TA= 25 PD Rating -1.
7 -1.
4 -9.
6 1.
25 10 12 -5.
0 -55 to + 150 100 Unit A W m W/ V V/ns /W *1 Repetitive rating; pulse width limited by max.
junction temperature.
*2 Surface mounted on FR-4 board, t *3 ISD -1.
2A, di/dt 100A/ s, VDD 10sec V(BR)DSS,TJ 150 www.
kexin.
com.
cn 1 SMD Type KRF7504 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%.
Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr ton TJ = 25 , IS = -1.
2A, VGS = 0V*1 TJ = 25 , IF =-1.
2A di/dt = 100A/ s*1 52 63 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.
5V, ID = -1.
2A*1 VGS = -2.
7V, ID = -0.
60A*1 Min -20 Typ Max Unit V -0.
012 0.
27 0.
40 -0.
7 1.
3 -1.
0 -25 -100 100 5.
4 0.
96 2.
4 9.
1 35 38 43 240 130 64 -1.
25 8.
2 1.
4 3.
6 V/ RDS(on) VGS(th)...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)