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KRF7555

Guangdong Kexin Industrial
Part Number KRF7555
Manufacturer Guangdong Kexin Industrial
Description HEXFET Power MOSFET
Published Aug 20, 2009
Detailed Description SMD Type HEXFET Power MOSFET KRF7555 IC IC Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Ve...
Datasheet PDF File KRF7555 PDF File

KRF7555
KRF7555

Overview
SMD Type HEXFET Power MOSFET KRF7555 IC IC Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
1mm) Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.
5V @ TA = 25 Continuous Drain Current, VGS @ -4.
5V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*2 Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS EAS dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM @TA= 25 @TA= 70 PD Rating -20 -4.
3 -3.
4 -34 1.
25 0.
8 10 12 36 1.
1 -55 to + 150 100 Unit A W W m W/ V Mj V/ns /W *1 Repetitive rating; pulse width limited by max.
junction temperature.
*2 Surface mounted on FR-4 board, t *3 ISD -2.
0A, di/dt -140A/ s, VDD 10sec V(BR)DSS,TJ 150 www.
kexin.
com.
cn 1 SMD Type KRF7555 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%.
Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -1.
6A, VGS = 0V*1 TJ = 25 , IF =-2.
5A di/dt = -100A/ s*1 54 41 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.
5V, ID = -4.
3A*1 VGS = -2.
5V, ID = -3.
4A*1 Min -20 Typ Max Unit V -0.
005 0.
055 0.
105 -0.
6 2.
5 -1.
0 -25 -100 100 10 2.
1 2.
5 10...


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