DatasheetsPDF.com

KRF7530

Guangdong Kexin Industrial
Part Number KRF7530
Manufacturer Guangdong Kexin Industrial
Description HEXFET Power MOSFET
Published Aug 20, 2009
Detailed Description SMD Type HEXFET Power MOSFET KRF7530 IC IC Features Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Ve...
Datasheet PDF File KRF7530 PDF File

KRF7530
KRF7530

Overview
SMD Type HEXFET Power MOSFET KRF7530 IC IC Features Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
1mm) Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.
5V,Ta = 25 Continuous Drain Current, VGS @ 4.
5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Single Pulse Avalanche Energy *2 Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Ambient *1 1* Surface mounted on FR-4 board, t 10sec.
EAS VGS TJ, TSTG R JA Symbol VDS ID ID IDM PD PD Rating 20 5.
4 4.
3 40 1.
3 0.
8 10 33 12 -55 to + 150 100 /W mW/ mJ V W A Unit A *2 Starting TJ = 25 , L = 2.
6mH,RG = 25 , IAS = 5.
0A.
www.
kexin.
com.
cn 1 SMD Type KRF7530 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%.
Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = 1.
3A, VGS = 0V*1 TJ = 25 , IF = 1.
3A.
VR=10V di/dt = 100A/ s*1 19 13 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = 1mA,Reference to 25 VGS = 4.
5V, ID = 5.
4A*1 VGS = 2.
5V, ID =4.
6A*1 Min 20 Typ Max Unit V 0.
01 0.
030 0.
045 0.
60 13 1.
0 25 -100 100 18 3.
4 3.
4 8.
5 11 36 16 1310 180 150 1.
3 26 5.
1 5.
1 1.
2 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = 250 A VDS = 10V, ID = 5.
4A*1 VDS = 16V, VGS = 0V VDS = 16...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)