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K2937

Renesas Technology
Part Number K2937
Manufacturer Renesas Technology
Description 2SK2937
Published Jan 13, 2010
Detailed Description 2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2...
Datasheet PDF File K2937 PDF File

K2937
K2937

Overview
2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.
5.
00 Sep 07, 2005 Features • Low on-resistance RDS =0.
026 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1.
Gate 2.
Drain 3.
Source 1 2 3 S www.
DataSheet4U.
com Rev.
4.
00 Sep 07, 2005 page 1 of 7 2SK2937 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 60 ±20 25 100 25 20 34 25 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time www.
DataSheet4U.
com Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4.
Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.
5 — — 11 — — — — — — — — — Typ — — — — — 0.
026 0.
045 17 740 380 140 10 160 100 150 0.
95 40 Max — — ±10 10 2.
5 0.
034 0.
070 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 VNote4 ID = 15 A, VGS = 4 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = ...


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