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V40100C

Vishay Siliconix
Part Number V40100C
Manufacturer Vishay Siliconix
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published May 3, 2010
Detailed Description www.vishay.com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier ...
Datasheet PDF File V40100C PDF File

V40100C
V40100C


Overview
www.
vishay.
com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
38 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V40100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI40100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max.
10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 20 A 100 V 250 A VF at IF = 20 A 0.
61 V TJ max.
Package 150 °C TO-220AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max.
repetitive peak reverse voltage Max.
average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG V40100C VI40100C 100 40 20 250 10 000 - 40 to + 150 UNIT V A A V/μs °C Revision: 16-Aug-13 1 Document Number: 89162 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com THIS DO...



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