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V40100K

Vishay
Part Number V40100K
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Mar 25, 2016
Detailed Description www.vishay.com V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO...
Datasheet PDF File V40100K PDF File

V40100K
V40100K

Overview
www.
vishay.
com V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A at TJ = 125 °C TJ max.
Package 2 x 20 A 100 V 250 A 0.
63 V 150 °C TO-220AB Diode variation Dual common cathode FEATURES • 150 °C high performance Schottky diode • Very low forward voltage drop • Optimized VF vs.
IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • Negligible switching losses • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, high efficiency SMPS, output rectification, freewheeling, reverse battery protection, DC/DC system and increased power density systems.
MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Marking: V40100K Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectifeid current (fig.
1) total device per diode Peak forward surge current 8.
3 ms single half sine-wave  superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.
5 A, L = 60 mH per diode Voltage rate of change Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM EAS dV/dt TJ, TSTG V40100K 100 40 20 250 67.
5 10 000 -40 to +150 UNIT V A A mJ V/μs °C Revision: 17-Aug-15 1 Document Number: 89208 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WIT...


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