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WTC2312

Weitron Technology
Part Number WTC2312
Manufacturer Weitron Technology
Description N-Channel Enhancement Mode Power MOSFET
Published Mar 19, 2011
Detailed Description WTC2312 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE ...
Datasheet PDF File WTC2312 PDF File

WTC2312
WTC2312

Overview
WTC2312 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 4.
9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.
5V RDS(ON)<47mΩ @VGS=2.
5V RDS(ON)<57mΩ @VGS=1.
8V * Capable of 2.
5V gate drive * Rugged and Reliable * Lower On-Resistance 2 SOURCE 3 1 2 SOT-23 Application: * Power Management in Notebook Computer.
* Portable Equipment.
* Battery Powered System.
Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,VGS@4.
5V(TA=25°C) ,VGS@4.
5V(TA=70°C) Pulsed Drain Current 1, 2 Total Power Dissipation(TA=25°C) Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature Range Unless Otherwise Specified) Symbol V DS VG S ID IDM PD R θJA TJ Tstg Value 20 ±8 4.
9 3.
4 15 0.
75 140 +150 -55~+150 Unit V A W °C /W °C °C Device Marking WTC2312=N12 http://www.
weitron.
com.
tw WEITRON 1/6 Rev.
B 04-Aug-09 WTC2312 Electric...


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