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BCP157

SeCoS
Part Number BCP157
Manufacturer SeCoS
Description PNP Epitaxial Planar Transistor
Published Jul 14, 2011
Detailed Description Elektronische Bauelemente BCP157 -3A, -80V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” spe...
Datasheet PDF File BCP157 PDF File

BCP157
BCP157

Overview
Elektronische Bauelemente BCP157 -3A, -80V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  -60Volt VCEO  3 Amp continuous current  Low saturation voltage PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch SOT-89 4 123 A EC  Base BD F Collector   Emitter G H J K L REF.
A B C D E F Millimeter Min.
4.
40 3.
94 1.
40 2.
30 Max.
4.
60 4.
25 1.
60 2.
60 1.
50 1.
70 0.
89 1.
2 REF.
G H J K L 1.
Base 2.
Collector 3.
Emitter Millimeter Min.
0.
40 1.
50 3.
00 0.
32 Max.
0.
58 TYP TYP 0.
52 0.
35 0.
44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous DC Pulse1 VCBO VCEO VEBO IC -80 -60 -5 -3 -6 Collector Power Dissipation Junction & Storage temperature PC PC2 TJ, TSTG 0.
5 2 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min.
-80 -60 -5 - 70 Typ.
200 DC current gain hFE 100 200 80 170 40 150 Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 - -150 -450 Base-emitter saturation voltage VBE(sat) - -0.
9 Base-emitter saturation voltage On VBE(ON) - -0.
8 Output capacitance CCO - - Transition frequency fT 100 140 Switching Time TON TOFF - 40 - 450 Note: 1.
Measured under pulse condition.
Pulse width<300us, Duty cycle<2% 2.
Spice parameter data is available upon urquest for this device.
Max.
-0.
1 -0.
1 300 -300 -600 -1.
25 -1 30 - Unit V V V μA μA mV mV V V pF MHz nS Test Conditions IC= -100μA, IE=0 IC= -10mA, IB=0 IE= -100μA, IC=0 VCB= -60V, IE=0 VEB= -4V, IC=0 VCE= -2V, IC= -50mA VCE= -2V, IC= -500mA VCE= -2V, IC= -1A VCE= -2V, IC= -2A IC= -1A, IB= -100mA IC= -3A, IB= -...


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