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BCP194

SeCoS
Part Number BCP194
Manufacturer SeCoS
Description Planar Medium Power Transistor
Published Jul 14, 2011
Detailed Description BCP194 Elektronische Bauelemente NPN Silicon Planar Medium Power Transistor RoHS Compliant Product Description www.Dat...
Datasheet PDF File BCP194 PDF File

BCP194
BCP194


Overview
BCP194 Elektronische Bauelemente NPN Silicon Planar Medium Power Transistor RoHS Compliant Product Description www.
DataSheet4U.
net SOT-89 The BCP194 is designed for medium power amplifier applications.
Features * 1 Amp Continuous Current * 60 Volt VCEO * Complementary to BCP195 REF.
A B C D E F Millimeter Min.
Max.
4.
4 4.
6 4.
05 4.
25 1.
50 1.
70 1.
30 1.
50 2.
40 2.
60 0.
89 1.
20 REF.
G H I J K L M Millimeter Min.
Max.
3.
00 REF.
1.
50 REF.
0.
40 0.
52 1.
40 1.
60 0.
35 0.
41 5 TYP.
0.
70 REF.
Absolute Maximum Ratings at TA=25 C Symbol VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Power Dissipation Junction and Storage Temperature o o Parameter Value 80 60 5 1 2 200 1 -55~+150 Units V V V A mA W O IC IB PD TJ,Tstg C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Typ.
Symbol Min 80 BVCBO *BVCEO Collector-Emitter Breakdown Voltage 60 BVEBO Emitter-Base Breakdown Voltage 5 Collector-Base Cutoff Current I CBO Emitter-Base Cutoff Current I CES Emitter-Base Cutoff Current I EBO *VCE(sat)1 Collector Saturation Voltage *VCE(sat)2 *VBE (sat) Base-Emitter Saturation Voltage *VBE (on) *hFE1 100 *hFE2 100 DC Current Gain *hFE3 80 30 *hFE4 Gain-Bandwidth Product fT 150 Output Capacitance Cob 2% * Measured under pulse condition.
Pulse width¡Ø300µs, Duty Cycle¡Ø Parameter Collector-Base Breakdown Voltage http://www.
SeCoSGmbH.
com Max 100 100 100 0.
25 0.
5 1.
1 1 300 10 Unit V V V nA nA nA V V V V Test Conditions I C=100 µA,IE=0 I C=10mA,IB=0 I E=100 µA,IC=0 VCB= 60V,IE=0 VCES=60V VEB=4V,IC=0 I C=500mA,IB=50mA I C=1A,IB=100mA I C=1A,IB=100mA I C=1A,VCE=5V VCE= 5 V, I C=1mA VCE= 5 V, I C=500mA VCE= 5 V, I C=1A VCE= 5 V, I C=2 A VCE= 10V, IC=50m A,f=100MHz VCB=10V , f=1MHz,IE=0 MH z pF Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 2 BCP194 Elektronische Bauelemente NPN Silicon Planar Medium Power Transistor Cha...


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