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BCP195

SeCoS
Part Number BCP195
Manufacturer SeCoS
Description Medium Power Transistor
Published Jul 14, 2011
Detailed Description PNP Silicon Planar Medium Power Transistor RoHS Compliant Product BCP195 SOT-89 Description www.DataSheet4U.net The B...
Datasheet PDF File BCP195 PDF File

BCP195
BCP195

Overview
PNP Silicon Planar Medium Power Transistor RoHS Compliant Product BCP195 SOT-89 Description www.
DataSheet4U.
net The BCP195 is designed for medium power amplifier applications.
1 2 3 1.
BASE Features * 1Amp Continuous Current * -60V VCEO * Complementary TO BCP194 2.
COLLECTOR 3.
EMITTER REF.
A B C D E F Min.
4.
4 4.
05 1.
50 1.
30 2.
40 0.
89 Millimeter Max.
4.
6 4.
25 1.
70 1.
50 2.
60 1.
20 REF.
G H I J K L M Min.
Max.
3.
00 REF.
1.
50 REF.
0.
40 0.
52 1.
40 1.
60 0.
35 0.
41 5 TYP.
0.
70 REF.
Millimeter Absolute Maximum Ratings at Ta=25 C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Power Dissipation Operating Junction and Storage Temperature o o Parameter Symbol VCBO VCEO VEBO IC IC IB PD TJ,TSTG -80 -60 -5 -1 -2 -200 1 +150,-55 ~ +150 Value Unit V V V A A mA W o C Electrical Characteristics (Ta=25 C, unless otherwise stated) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Saturation Cut-off Current Collector-Emitter Saturation Voltage Output Capacitance Base-Emitter Voltage DC Current Gain Transition Frequency Parameter Symbol BVCBO BV CEO BVEBO ICBO IEBO ICES VCE(sat)1 VCE(sat) 2 Cob VBE(sat) VBE(on) hFE1 hFE2 hFE3 hFE4 fT Min.
-80 -60 -5 100 100 80 15 150 Typ.
Max.
-100 -100 -100 -0.
3 -0.
6 10 -1.
2 -1 300 - Unit V V V nA nA nA V V pF V V MHz IC=-100µA, IE=0 IC=-10mA, IB=0 IE=-100 µA, IC=0 VCB=-60V, IE=0 VEB=-4V, IC=0 VCES =-60V IC=-500mA, IB=-50mA IC =-1A, I B =-100mA VCB=-10V, f=1MHz,IE=0 IC=-1A, I B =-100mA VCE=-5V,I B =-1A VCE=-5V, IC=-1mA VCE=-5V, IC=-500mA VCE=-5V, IC=-1A VCE=-5V, IC=-2A VCE=-10V,I C=-50mA, f=100MHz Test Conditions http://www.
SeCoSGmbH.
com Any changing of specification will not be informed individual 01-Jun-2003 Rev.
B Page 1 of 2 Elektronische Bauelemente PNP Silicon Planar Medium Power Transistor BCP195 Characteristics Curve http:...


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