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2SC4007

Part Number	2SC4007
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Oct 19, 2011
Detailed Description	isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·...
Datasheet	2SC4007 PDF File

Overview

isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.
0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipatio...

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