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BDV66B

Part Number	BDV66B
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Darlington Power Transistor
Published	Dec 10, 2012
Detailed Description	isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Sa...
Datasheet	BDV66B PDF File

Overview

isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.
0V(Max.
)@ IC= -10A ·Complement to Type BDV67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV66 -80 VCBO Collector-Base Voltage BDV66A -100 V BDV66B -120 BDV66C -140 BDV66 -60 VCEO Collector-Emitter Voltage BDV66A -80 V BDV66B -100 BDV66C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16...

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