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2SC6061

Toshiba
Part Number 2SC6061
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Oct 15, 2013
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 2SC6061 High-Speed Switching Applications DC-DC Converter Applic...
Datasheet PDF File 2SC6061 PDF File

2SC6061
2SC6061

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 2SC6061 High-Speed Switching Applications DC-DC Converter Applications ・High-DC current gain: hFE = 120 to 300 (IC = 0.
1 A)・ Low-collector-emitter saturation: VCE (sat) = 0.
14 V (max) ・High-speed switching: tf = 0.
2 μs (typ.
) Absolute Maximum Ratings (Ta = 25°C) 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 +0.
2 2.
8-0.
3 +0.
2 1.
6-0.
1 Unit: mm 0.
4±0.
1 1 2 3 0.
16±0.
05 0.
15 0.
7±0.
05 Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) DC Pulse Base current Collector power dissipation (Note 2) t = 10s DC Junction temperature Storage t...


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