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2SC643

Part Number	2SC643
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 15, 2013
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC643 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- ...
Datasheet	2SC643 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC643 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.
5 A ICM Collector Current-Peak 7.
5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ ...

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