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2SC681

Part Number	2SC681
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 15, 2013
Detailed Description	isc Silicon NPN Power Transistor 2SC681 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V (Min) ·Low...
Datasheet	2SC681 PDF File

Overview

isc Silicon NPN Power Transistor 2SC681 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 2.
0V(Max.
)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in B/W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 50 W ...

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