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AP60T03AS

Advanced Power Electronics
Part Number AP60T03AS
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Dec 26, 2013
Detailed Description AP60T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D N-CHA...
Datasheet PDF File AP60T03AS PDF File

AP60T03AS
AP60T03AS

Overview
AP60T03AS/P Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12mΩ 45A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP60T03AP) are available for low-profile applications.
TO-263(S) TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 45 32 120 44 0.
352 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 3.
4 62 Unit ℃/W ℃/W Data and specifications subject to change without notice 200909032 Free Datasheet http://www.
datasheet4u.
com/ AP60T03AS/P Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
30 1 - Typ.
0.
026 Max.
Units 12 25 3 1 250 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.
5V, ID=15A VDS=VGS, ID=250uA 25 11.
6 3.
9 7 8.
8 57.
5 18.
5 6.
4 1135 200 135 Gate Threshold Voltage Forward Transconductance 2 o VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V V...


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