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2SC6072

Part Number	2SC6072
Manufacturer	Toshiba
Description	Multi-chip Device Silicon NPN Transistor
Published	Jan 26, 2014
Detailed Description	2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Power Amplifier Applications Driver Sta...
Datasheet	2SC6072 PDF File

Overview

2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm ・High transition frequency: fT = 200 MHz (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 180 180 5 2.
0 1.
0 2.
0 20 150 − 55~150 Unit V V V A A W W °C °C 1: BASE 2: COLLECTOR 3: EMITTER JEDEC JEITA TOSHIBA Weight: 1.
7 g (typ.
) ― SC-67 2-10U1A Note1: Using continuously under heavy loads (e...

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