DatasheetsPDF.com

K2993

Toshiba Semiconductor
Part Number K2993
Manufacturer Toshiba Semiconductor
Description 2SK2993
Published Jun 1, 2014
Detailed Description 2SK2993 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2993 Chopper Regulator, DC−DC Converter ...
Datasheet PDF File K2993 PDF File

K2993
K2993

Overview
2SK2993 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2993 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 82 mΩ (typ.
) : |Yfs| = 20 S (typ.
) Unit: mm l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) l Enhancement−mode : Vth = 1.
5~3.
5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics S Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Not e 1) ymbol VDSS VDGR VGSS ± ID IDP PD 100 EAS 423 IAR EAR 10 Tch 150 Tstg −55~150 ° 20 Rating 250 250 20 20 60 Unit V V V A W mJ A mJ °C C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Not Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range e 2) JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.
5 g (typ.
) ― ― Thermal Characteristics Characteristics S Thermal resistance, channel to case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1.
Rth (ch−a) 83.
Max 25 3 Unit °C / W °C / W Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.
79 mH, IAR = 20 A, RG = 25 Ω Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC JEITA TOSHIBA ― ― 2-10S2B Weight: 1.
5 g (typ.
) 1 2002-01-25 http://www.
Datasheet4U.
com 2SK2993 Electrical Characteristics (Ta = 25°C) Characteristics S Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time ymbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| V Ciss — Crss Coss tr — ton tf toff Qg Qgs Qgd VDD ≈ 200 V, VGS = 10 V, ID = 20 A — VDS = 10 V, VGS = 0 V, f = 1 MHz — — 1000 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)