DatasheetsPDF.com

FLM0910-4F

SUMITOMO
Part Number FLM0910-4F
Manufacturer SUMITOMO
Description X / Ku-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1...
Datasheet PDF File FLM0910-4F PDF File

FLM0910-4F
FLM0910-4F

Overview
FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.
0dBm (Typ.
) High Gain: G1dB = 7.
5dB (Typ.
) High PAE: ηadd = 29% (Typ.
) Low IM3 = -46dBc@Po = 25.
5dBm Broad Band: 9.
5 ~ 10.
5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25.
0 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 16.
0 and -2.
2 mA respectively with gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 10.
5 GHz, ∆f = 10 MHz 2-Tone Test Pout = 25.
5dBm S.
C.
L.
Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.
65 IDSS (Typ.
), f = 9.
5 ~10.
5 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 1100mA VDS = 5V, IDS = 85mA IGS = -85µA Min.
-0.
5 -5.
0 35.
5 6.
5 -44 Limit Typ.
Max.
1700 2600 1700 -1.
5 36.
0 7.
5 29 -46 5.
0 -3.
0 ±0.
6 6.
0 80 Unit mA mS V V dBm dB mA % dB dBc °C/W °C 1100 1300 G.
C.
P.
: Gain Compression Point, S.
C.
L.
: Single Carrier Level Edition 1.
3 August 2004 1 FLM0910-4F X, Ku-Band Internally ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)