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SSM9926

South Sea Semiconductor
Part Number SSM9926
Manufacturer South Sea Semiconductor
Description Dual N-Channel MOSFET
Published Sep 14, 2014
Detailed Description SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.0V 20V 5A 4...
Datasheet PDF File SSM9926 PDF File

SSM9926
SSM9926


Overview
SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.
0V 20V 5A 40 @ VGS = 2.
5V SO-8 FEATURES ◆Super high dense cell design for low RDS(ON).
◆Rugged and reliable.
◆Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Soure Voltage Drain Current-Continuous @Tc=25oC -Pulsedb Drain-Source Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ±10 5 25 1.
7 2 -55 to 150 Unit V V A A A W o C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambienta RθJA 62.
5 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, July 2005 (Rev 1.
0) 1 of 7 SSM9926 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VSD Condition VGS=0V, ID=250μA VDS=-16V, VGS=0V VGS=±10V, VDS=0V VDS=VGS, ID=250μA VGS=4.
0V, ID=5A VGS=2.
5V, ID=5A VDS=5V, ID=6A VDS=8V, VGS=0V, f =1.
0MHZ VD=10V , ID=1A , VGEN=4.
5V, RGEN=10Ω, RL=10Ω VDS=10V, ID=1A, VGS=4.
5V VGS=0V, IS=1.
7A Min Typc Max Unit 20 1 ±100 0.
6 25 35 12 908 192 151 35 13 45 25 15 2.
5 2.
5 0.
7 1.
2 V nC ns PF V μA nA V 30 40 S mΩ Notes： a.
Surface Mounted on FR4 Board, t≦10sec.
b.
Pulse Test：Pulse Width≦300μs, Duty Cycle≦2%.
c.
Guaranteed by design, not subject to production testing.
South Sea Semiconductor reserves the right to make changes to improve reli...


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