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IRF6216

International Rectifier
Part Number IRF6216
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 18, 2014
Detailed Description PD - 94297 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters IRF6216 HEXFET® Power MOSFET ...
Datasheet PDF File IRF6216 PDF File

IRF6216
IRF6216

Overview
PD - 94297 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters IRF6216 HEXFET® Power MOSFET RDS(on) max ID 0.
240Ω@VGS =-10V -2.
2A l VDSS -150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l S 1 8 7 A D D D D S S G 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
-2.
2 -1.
9 -19 2.
5 0.
02 ± 20 7.
8 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ.
––– ––– Max.
20 50 Units °C/W Notes  through „ are on page 8 www.
irf.
com 1 02/12/02 IRF6216 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
-150 ––– ––– -3.
0 ––– ––– ––– ––– Typ.
––– -0.
17 ––– ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA ƒ 0.
240 Ω VGS = -10V, ID = -1.
3A ƒ -5.
0 V VDS = VGS, ID = -250µA -25 VDS = -150V, VGS = 0V µA -250 VDS = -120V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ...


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