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SSM3K36TU

Toshiba Semiconductor
Part Number SSM3K36TU
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 19, 2014
Detailed Description SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU ○ High-Speed Switching Applications • 1....
Datasheet PDF File SSM3K36TU PDF File

SSM3K36TU
SSM3K36TU

Overview
SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU ○ High-Speed Switching Applications • 1.
5-V drive • Low ON-resistance: Ron = 1.
52 Ω (max) (@VGS = 1.
5 V) : Ron = 1.
14 Ω (max) (@VGS = 1.
8 V) : Ron = 0.
85 Ω (max) (@VGS = 2.
5 V) : Ron = 0.
66 Ω (max) (@VGS = 4.
5 V) : Ron = 0.
63 Ω (max) (@VGS = 5.
0 V) Absolute Maximum Ratings (Ta = 25˚C) 2.
0±0.
1 0.
65±0.
05 Unit: mm 2.
1±0.
1 1.
7±0.
1 0.
3-+00.
.
015 1 2 3 0.
166±0.
05 0.
7±0.
05 Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 500 mA 1000 Drain power dissipation PD (Note 1) 500 mW PD (Note 2) 800 UFM JEDEC 1: Gate 2: Source 3: Drain ― Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-2U1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 6.
6 mg (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note1: Mounted on an FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2) Note2: Mounted on a ceramic board.
(25.
4 mm × 25.
4 mm × 0.
8 mm, Cu Pad: 645 mm2) Marking 3 Equivalent Circuit (top view) 3 NX 1 2 1 2 Start of commercial production 2008-02 1 2014-03-01 SSM3K36TU Electrical Characteristics (Ta = 25°C) Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse trans...


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