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SSM3K36FS

Toshiba Semiconductor
Part Number SSM3K36FS
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 19, 2014
Detailed Description SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications • 1....
Datasheet PDF File SSM3K36FS PDF File

SSM3K36FS
SSM3K36FS

Overview
SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications • 1.
5-V drive • Low ON-resistance : Ron = 1.
52 Ω (max) (@VGS = 1.
5 V) : Ron = 1.
14 Ω (max) (@VGS = 1.
8 V) : Ron = 0.
85 Ω (max) (@VGS = 2.
5 V) : Ron = 0.
66 Ω (max) (@VGS = 4.
5 V) : Ron = 0.
63 Ω (max) (@VGS = 5.
0 V) Unit: mm Absolute Maximum Ratings (Ta = 25 °C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ± 10 V Drain current DC ID 500 mA Pulse IDP 1000 Drain power dissipation PD (Note 1) 150 mW Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the TOSHIBA 2-2H1B reliability significantly even if the operating conditions (i.
e.
operating Weight: 2.
4 mg (typ.
) temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 0.
36 mm2 × 3) Marking 3 NX 1 2 Equivalent Circuit (top view) 3 1 2 © 2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2008-02 2020-07-01 SSM3K36FS Electrical Characteristics (Ta = 25°C) Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Switching time Turn-on time Turn-off time Drain-source forwa...


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