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2SC401 Datasheet PDF


Part Number 2SC401
Manufacturer SEMTECH ELECTRONICS
Title NPN Silicon Epitaxial Planar Transistor
Description ST 2SC401 NPN Silicon Epitaxial Planar Transistor for low saturation switching and voltage regulator applications. 1. Emitter 2. Collector 3. Bas...
Features Typ. 160 10 Max. 400 100 100 0.4 1.2 - Unit nA nA V V V MHz pF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ®  Dated:29/02/2012 Rev:01 ST 2SC401 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ®  Dated:29/02/2012 Rev:01 ...

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2SC400 : : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC400 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 053 MAX. FEATURES . High Transition Frequency : fx=30GMHz (Typ.) . Low Collector Output Capacitance : C ^=4pF (Typ .) . Low Saturation Voltage : V CE ( sat )=0.15V (Typ.) at I c=10mA, I B=lmA . High Switching Speed : t s tg=300ns (Typ.) 04.95 MAX. 1" ~ ri| l l r 00.4 5 r a in d aH' . Complementary to 2SA500. 02 2 \3 j MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage Emitter Base Voltage VCEO VEBO 20 V 5 V 1. EMITTER Collector Current Base.

2SC4001 : .

2SC4001 : ·The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation FEATURES ·Collector–Emitter Sustaining Voltage- : VCBO = 300 V(Min) ·Complement to Type 2SA1546 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4001 .

2SC4002 : Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 5.0 0.45 0.5 0.45 0.6 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 1.3 1.3 Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff C.

2SC4002 : 2SC4002 Ordering number : ENN2960A 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE VCB=300V, IE=0 VEB=4V, IC=0 VCE.

2SC4002 : ST 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.18g Absolute Maximum Ratings (T a = 25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS G S P FORM A IS AVAILABLE Value 400 400 5 200 400 600 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: .

2SC4002 : 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25oC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.18g Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS Value 400 400 5 200 400 600 150 -55 to +150 Unit V V V mA mA mW OC OC Page 1 of 2.

2SC4003 : NPN Epitaxial Planar Silicon Transistor FEATURES  High hFE hFE=60 to 200.  Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 400 V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 0.2 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)014 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Planar Silicon Transistor 2SC4003 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter S.

2SC4003 : Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=300V, IE=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 DC Current.

2SC4003 : ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.2 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4003 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless.

2SC4003 : TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package. / Features ,, MBIT 。 High breakdown voltage, adoption of MBIT process excellent hFE linearity. / Applications 。 High voltage driver applications. / Equivalent Circuit / Pinning 12 3 4 PIN1:Base PIN 2,4:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range D 60~120 E 100~200 http://www.fsbrec.com 1/6 2SC4003 Rev.E May.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Collector Power Dissipation Collector Power Dissipa.

2SC4003 : Transys Electronics L I M I T E D www.DataSheet4U.com TO-251 Plastic-Encapsulated Transistors 2SC4003 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO.

2SC4003 : www.DataSheet4U.com SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4003 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High breakdown voltage +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 Excellent hFE linearity 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO V.

2SC4003 : 2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 1 23 3. EMITTER Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 400 400 5 0.2 1 150 -55-150 V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10µA,.

2SC4004 : Power Transistors 2SC4004 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 / ■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 900 V c type Collector-emitter voltage (E-B short) V.

2SC4004 : ·With TO-220Fa package · Wide area of safe operation (ASO) ·High-speed switching ·High collector to base voltage VCBO APPLICATIONS ·For high breakdown voltage highspeed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4004 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 1 2 0.3 30 w UNIT V V.

2SC4004 : ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.3 A 2 W 30 1.




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