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K3142

Hitachi Semiconductor
Part Number K3142
Manufacturer Hitachi Semiconductor
Description 2SK3142
Published Dec 27, 2014
Detailed Description 2SK3142 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low dri...
Datasheet PDF File K3142 PDF File

K3142
K3142

Overview
2SK3142 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM ADE-208-681A (Z) 2nd.
Edition February 1999 D G 123 1.
Gate 2.
Drain 3.
Source S 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note 1 D(pulse) I DR I Note 3 AP E Note 3 AR Pch Note 2 Channel temperature Tch Storage temperature Tstg Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Ratings 30 ±20 60 240 60 35 122 35 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK3142 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source leak current I GSS Zero gate voltege dra...


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