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K2973

Mitsubishi
Part Number K2973
Manufacturer Mitsubishi
Description 2SK2973
Published Mar 5, 2015
Detailed Description MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF ...
Datasheet PDF File K2973 PDF File

K2973
K2973

Overview
MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
OUTLINE DRAWING 4.
6MAX FEATURES • High power gain:Gpe≥13dB @VDD=9.
6V,f=450MHz,Pin=17dBm • High efficiency:55% typ.
• Source case type SOT-89 package (connected internally to source) 1.
6±0.
2 2 13 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
0.
53 1.
5 MAX 3.
0 0.
48MAX 1 : DRAIN 2 : SOURCE 3 : GATE SOT-89 Dimensions in mm 1.
5±0.
1 0.
4 +0.
03 -0.
05 MARKING MARKING TYPE No.
K1 LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol Parameter Conditions VDSS Drain to source voltage VGSS Gate to source voltage Pch Channel dissipation Tc=25˚C (Note2) Tj Junction temperature Tstg Storage temperature Note1: Above parameters are guaranteed independently.
2: Solder on printed board(Copper leaf area;70×70mm,t=1.
6mm Epoxy glass) Ratings 17 ±10 1.
5 150 -40...


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