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K2983

NEC
Part Number K2983
Manufacturer NEC
Description 2SK2983
Published Mar 5, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This produc...
Datasheet PDF File K2983 PDF File

K2983
K2983

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES • Low on-resistance RDS(on)1 = 20 mΩ (MAX.
) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.
) (VGS = 4.
5 V, ID = 15 A) • Low Ciss Ciss = 1200 pF TYP.
• Built-in gate protection diode ORDERING INFOMATION PART NUMBER 2SK2983 2SK2983-S 2SK2983-ZJ PACKAGE TO-220AB TO-262 TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source VoltageNote1 Gate to Source VoltageNote2 VDSS VGSS 30 ±20 Drain Current (DC) Drain Current (pulse)Note3 ID(DC) ID(pulse) ±30 ±120 Total Power Dissipation (TA = 25°C) PT 1.
5 Total Power Dissipation (TC = 25°C) PT 50 Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 V V A A W W °C °C Notes1.
VGS = 0 V 2.
VDS = 0 V 3.
PW ≤ 10 µ s, Duty Cycle ≤ 1 % .
The information in this document is subject to change without notice.
Document No.
D12357EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan © 1998 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VGS = 10 V, ID = 15 A VGS = 4.
5 V, ID = 15 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 15 A VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 15 A VGS(on) = 10 V VDD = 15 V RG = 10 Ω ID = 30 A VDD = 24 V VGS = 10 V IF = 30 A, VGS = 0 V Reverse Recovery Time Reverse Recovery Charge trr IF = 30 A, VGS = 0 V Qrr d...


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