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CEB6056

CET
Part Number CEB6056
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2mΩ @VGS = 10V. Supe...
Datasheet PDF File CEB6056 PDF File

CEB6056
CEB6056

Overview
CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.
2mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 100 IDM 360 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 100 0.
66 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 272 33 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
5 62.
5 Units C/W C/W Details are subject to change without notice .
1 Rev 2.
2011.
Dec http://www.
cet-mos.
com CEP6056/CEB6056 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 20A gFS Ciss Coss Crss VDS = 25V, ID = 50A VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 30V, ID = 50A, VGS = 10V, RGEN = 3.
6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 48V...


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