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C5176

Part Number	C5176
Manufacturer	Toshiba
Description	2SC5176
Published	Oct 2, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter ...
Datasheet	C5176 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter Applications 2SC5176 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.
0 μs (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 100 80 7 5 8 1 1.
8 150 −55 to 150 V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10T1A Note: Using continuously under heav...

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